| PART |
Description |
Maker |
| MT5365-UV |
Dimension in mm High power, high-speed, narrow beam angle, high reliablitiy
|
Marktech Corporate
|
| FS30KMH-2 |
Power MOSFETs: FS Series, Low Voltage, 100V for High-Speed Switching Use
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Powerex Power Semiconductors
|
| FS50UMJ-3 |
Power MOSFETs: FS Series, Low Voltage, 150V for High-Speed Switching Use
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| VO2631-X017T VO2601 VO2601-X017T |
High Speed Optocouplers 10Mbd High-Speed Dual CTR>300%
High Speed Optocoupler, Single and Dual, 10 MBd
|
Vishay Semiconductors
Vishay Siliconix
|
| BUX4012 |
HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
|
Comset Semiconductor
|
| 2N6032 2N6033 |
HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS
|
ETC
GESS[GE Solid State]
|
| BUX33B BUX33A |
HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS
|
Semelab
|
| 2SC2616 |
HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING
|
Unknow
ETC[ETC]
List of Unclassifed Manufacturers
|
| BTS640S2 BTS640S2G BTS640S2S Q67060-S6307-A5 Q6706 |
High Speed CMOS Logic Dual 4-Stage Static Shift Registers 16-SOIC -55 to 125 智能感知高端功率开
High Speed CMOS Logic Quad Bilateral Switches 14-PDIP -55 to 125
Smart Sense High-Side Power Switch
Smart High Side Switches - 5,0-34V, 30mΩ Limit(scr) 24A
|
INFINEON[Infineon Technologies AG]
|
| TPC8006-H |
Field Effect Transistor Silicon N Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Portable Equipment Applications Notebook PC Applications
|
TOSHIBA
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
